The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 08, 2013
Filed:
Jun. 30, 2011
Jong Kyoung Park, Gyeonggi, KR;
Man Ho Han, Gyeonggi, KR;
Hyun Jin Kim, Gyeonggi, KR;
Deog Bae Kim, Gyeonggi, KR;
Jong Kyoung Park, Gyeonggi, KR;
Man Ho Han, Gyeonggi, KR;
Hyun Jin Kim, Gyeonggi, KR;
Deog Bae Kim, Gyeonggi, KR;
Dongjin Semichem Co., Ltd., , KR;
Abstract
A polymer for forming a resist protection film which is used in a liquid immersion lithography process to protect a photoresist layer, a composition for forming a resist protection film, and a method of forming a pattern of a semiconductor device using the composition are disclosed. The polymer for forming a resist protection film includes a repeating unit represented by Formula 1 below. In Formula 1, Ris a hydrogen atom (H), a fluorine atom (F), a methyl group (—CH), a C1-C20 fluoroalkyl group, or a C1-C5 hydroxyalkyl group, Ris a C1-C10 linear or branched alkylene group or alkylidene group, or a C5-C10 cycloalkylene group or cycloalkylidene group, X is wherein n is an integer of 0 to 5 and * denotes the remaining moiety of Formula 1 after excluding X, and m, the stoichiometric coefficient of X, is 1 or 2.