The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 8549718 B1

PDF
Full Text
Expired
Date of Patent:
Oct. 08, 2013

Filed:

Sep. 17, 2012
Applicant:

Fujifilm Corporation, Tokyo, JP;

Inventors:

Hiroyuki Kobayashi, Kanagawa-ken, JP;

Yukio Sakashita, Kanagawa-ken, JP;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 41/22 (2013.01); H04R 17/00 (2006.01); B41J 2/045 (2006.01);
U.S. Cl.
CPC ...
Abstract

A ferroelectric oxide structure includes a substrate and a ferroelectric thin-film deposited on the substrate. The ferroelectric thin-film has a thickness of greater than or equal to 200 nm and a tetragonal crystal system. The ferroelectric thin-film has (100) single-orientation crystal orientation.


Find Patent Forward Citations

Kobayashi, Hiroyuki. (2013). Ferroelectric oxide structure, method for producing the structure, and liquid-discharge apparatus (U.S. Patent No. 8549718). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/8549718

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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