The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 01, 2013

Filed:

Dec. 12, 2008
Applicants:

Wei Wu, Palo Alto, CA (US);

John Paul Strachan, Stanford, CA (US);

R. Stanley Williams, Portola Valley, CA (US);

Marco Florentino, Mountain View, CA (US);

Shih-yuan Wang, Palo Alto, CA (US);

Nathaniel J. Quitoriano, Pacifica, CA (US);

Hans S. Cho, Palo Alto, CA (US);

Julien Borghetti, Mountain View, CA (US);

Sagi Varghese Mathai, Palo Alto, CA (US);

Inventors:

Wei Wu, Palo Alto, CA (US);

John Paul Strachan, Stanford, CA (US);

R. Stanley Williams, Portola Valley, CA (US);

Marco Florentino, Mountain View, CA (US);

Shih-Yuan Wang, Palo Alto, CA (US);

Nathaniel J. Quitoriano, Pacifica, CA (US);

Hans S. Cho, Palo Alto, CA (US);

Julien Borghetti, Mountain View, CA (US);

Sagi Varghese Mathai, Palo Alto, CA (US);

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

A memristive routing device includes a memristive matrix, mobile dopants moving with the memristive matrix in response to programming electrical fields and remaining stable within the memristive matrix in the absence of the programming electrical fields; and at least three electrodes surrounding the memristive matrix. A method for tuning electrical circuits with a memristive device includes measuring a circuit characteristic and applying a programming voltage to the memristive device which causes motion of dopants within the memristive device to alter the circuit characteristic. A method for increasing a switching speed of a memristive device includes drawing dopants from two geometrically separated locations into close proximity to form two conductive regions and then switching the memristive device to a conductive state by applying a programming voltage which rapidly merges the two conductive regions to form a conductive pathway between a source electrode and a drain electrode.


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