The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 01, 2013
Filed:
Jan. 26, 2011
Edward-yi Chang, Hsinchu County, TW;
Shyr-long Jeng, Tainan, TW;
Ming-tsan Peng, Taoyuan County, TW;
Edward-Yi Chang, Hsinchu County, TW;
Shyr-Long Jeng, Tainan, TW;
Ming-Tsan Peng, Taoyuan County, TW;
Industrial Technology Research Institute, Hsinchu, TW;
Abstract
A power circuit is applicable to a Direct Current (DC) to DC converter. The power circuit includes a gate driver circuit and a High Electron Mobility Transistor (HEMT). The gate driver circuit functions as a Sigmoid (S) function and controls a gate and a source of the HEMT with a cross voltage of the sigmoid (S) type function. Accordingly, an overall characteristic curve of the HEMT and the gate driver circuit is like a characteristic curve of a single rectifier diode, so as to achieve a rectifying, freewheeling, or reversing effect. In addition, since an energy loss is low when the HEMT is conducted, the energy loss of the whole power circuit is much less than that of a conventional diode.