The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 01, 2013

Filed:

Oct. 20, 2009
Applicant:

Gang Wei, Beijing, CN;

Inventor:

Gang Wei, Beijing, CN;

Assignee:

Beijing NMC Co. Ltd., Beijing, CN;

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01J 7/24 (2006.01);
U.S. Cl.
CPC ...
Abstract

A plasma processing device includes a first electrode plate (), a second electrode plate (), a matching device (), a power distribution device () and a power supply device (). The first electrode plate () includes at least two sub-electrode plates () insulated from each other; the power supply device () is connected to the power distribution device () via the matching device (); the power distribution device () is connected to the first electrode plate () for inputting and distributing the power of the power supply device () to each of the sub-electrode plates (); the power distribution device () at least includes capacitors (C, C) and/or inductances (L, L). The plasma processing device distributes the power of the power supply device () into several portions corresponding to the number of the sub-electrodes () through the power distribution device (), and each portion of the power is individually inputted to the corresponding sub-electrode () to acquire individual electric field distribution between each sub-electrode plate () and the second electrode plate ().


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