The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 01, 2013

Filed:

Sep. 29, 2009
Applicants:

Lars Thylen, Huddinge, SE;

Alexandre Bratkovski, Mountain View, CA (US);

Shih-yuan Wang, Palo Alto, CA (US);

R. Stanley Williams, Portola Valley, CA (US);

Inventors:

Lars Thylen, Huddinge, SE;

Alexandre Bratkovski, Mountain View, CA (US);

Shih-Yuan Wang, Palo Alto, CA (US);

R. Stanley Williams, Portola Valley, CA (US);

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 27/14 (2006.01); G11C 19/08 (2006.01); G11C 17/06 (2006.01); G11C 11/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

An optoelectronic memory cell has a transparent top electrode, a photoactive layer, a latching layer, and a bottom electrode. The photoactive layer absorbs photons transmitted through the top electrode and generates charge carriers. During light exposure, the latching layer changes its resistance under an applied electric field in response to the generation of charge carriers in the photoactive layer.


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