The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 01, 2013
Filed:
Oct. 17, 2011
Yuki Imoto, Kanagawa, JP;
Tetsunori Maruyama, Kanagawa, JP;
Takatsugu Omata, Kanagawa, JP;
Yusuke Nonaka, Kanagawa, JP;
Tatsuya Honda, Kanagawa, JP;
Akiharu Miyanaga, Tochigi, JP;
Yuki Imoto, Kanagawa, JP;
Tetsunori Maruyama, Kanagawa, JP;
Takatsugu Omata, Kanagawa, JP;
Yusuke Nonaka, Kanagawa, JP;
Tatsuya Honda, Kanagawa, JP;
Akiharu Miyanaga, Tochigi, JP;
Semiconductor Energy Laboratory Co., Ltd., Atsugi-shi, Kanagawa-ken, JP;
Abstract
It is an object of an embodiment of the present invention to reduce leakage current between a source and a drain in a transistor including an oxide semiconductor. As a first gate film in contact with a gate insulating film, a compound conductor which includes indium and nitrogen and whose band gap is less than 2.8 eV is used. Since this compound conductor has a work function of greater than or equal to 5 eV, preferably greater than or equal to 5.5 eV, the electron concentration in an oxide semiconductor film can be maintained extremely low. As a result, the leakage current between the source and the drain is reduced.