The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 01, 2013
Filed:
Dec. 31, 2012
Renesas Electronics Corporation, Kawasaki, JP;
Hiraku Chakihara, Tokyo, JP;
Tsutomu Okazaki, Tokyo, JP;
Renesas Electronics Corporation, Kawasaki-shi, JP;
Abstract
A technique capable of improving the reliability of a non-volatile memory semiconductor device is provided and, in particular, a technique capable of supplying electricity without fail to a memory gate electrode of split gate transistor is provided. One end of an electricity supply line ESL is arranged over a terminal end TEand the other end thereof is arranged over a terminal end TE, and further, the central portion of the electricity supply line ESL is arranged over a dummy part DMY. That is, the terminal end TE, the terminal end TE, and the dummy part DMY have substantially the same height, and therefore, most of the electricity supply line ESL arranged from over the terminal end TEto over the terminal end TEvia the dummy part DMY is formed so as to have the same height.