The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 01, 2013
Filed:
Sep. 22, 2011
Applicants:
Jingrong Zhou, Austin, TX (US);
David Wu, Austin, TX (US);
James F. Buller, Austin, TX (US);
Inventors:
Assignee:
Globalfoundres Inc., Grand Cayman, KY;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/76 (2006.01); H01L 29/94 (2006.01); H01L 31/062 (2012.01); H01L 31/113 (2006.01); H01L 31/119 (2006.01);
U.S. Cl.
CPC ...
Abstract
Shallow trench isolation silicon-on-insulator (SOI) devices are formed with improved charge protection. Embodiments include an SOI film diode and a Psubstrate junction as a charging protection device. Embodiments also include a conductive path from the SOI transistor drain, through a conductive contact, a metal line, a second conductive contact, an SOI diode, isolated from the transistor, a third conductive contact, a second conductive line, and a fourth conductive contact to a P-doped substrate contact in the bulk silicon layer of the SOI substrate.