The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 01, 2013
Filed:
Jun. 01, 2011
Hiroshi Furuta, Kanagawa, JP;
Takaaki Kobayashi, Kanagawa, JP;
Hirofumi Azuhata, Kanagawa, JP;
Tomoya Morita, Kanagawa, JP;
Ryuichi Okamura, Kanagawa, JP;
Toshifumi Takahashi, Kanagawa, JP;
Hiroshi Furuta, Kanagawa, JP;
Takaaki Kobayashi, Kanagawa, JP;
Hirofumi Azuhata, Kanagawa, JP;
Tomoya Morita, Kanagawa, JP;
Ryuichi Okamura, Kanagawa, JP;
Toshifumi Takahashi, Kanagawa, JP;
Renesas Electronics Corporation, Kanagawa, JP;
Abstract
In addition to a memory macro region and functional circuit regions on a substrate, a semiconductor integrated circuit device includes a dummy pattern regionarranged between the functional circuit regions and between the memory macro regionand the functional circuit regions and including a dummy pattern. The dummy pattern has a pattern identical to that of diffusion layers and gate electrodes of a memory cell pattern in a memory cell array region. An area ratio of dummy diffusion layer(s) and dummy gate electrode(s) in the dummy pattern region is equal to or greater than that of the diffusion layers and the gate electrode(s) in the memory cell array region.