The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 01, 2013
Filed:
Oct. 19, 2010
Applicants:
Tomofumi Yamamuro, Kawasaki, JP;
Hiroyuki Kato, Yokohama, JP;
Akio Ogawa, Yamato, JP;
Inventors:
Assignee:
Stanley Electric Co., Ltd., Tokyo, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/12 (2006.01); H01L 21/00 (2006.01);
U.S. Cl.
CPC ...
Abstract
In a ZnO based compound semiconductor device, nitrogen (N) doped (Mg)ZnO:N layer is inserted as a diffusion barrier layerbetween a ZnO based n-type layerto which n-type dopants are doped and an active layeror a p-type layer. The diffusion barrier layerprevents diffusion of the n-type dopants to the active layeror the p-type layer. Crystalline quality of the active layerof the ZnO based compound semiconductor device is not deteriorated by the diffusion of the n-type dopants.