The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 01, 2013

Filed:

Dec. 22, 2011
Applicants:

Kyozo Kanamoto, Tokyo, JP;

Hirofumi Konishi, Tokyo, JP;

Hidetada Tokioka, Tokyo, JP;

Mikio Yamamuka, Tokyo, JP;

Hiroyuki Fuchigami, Tokyo, JP;

Inventors:

Kyozo Kanamoto, Tokyo, JP;

Hirofumi Konishi, Tokyo, JP;

Hidetada Tokioka, Tokyo, JP;

Mikio Yamamuka, Tokyo, JP;

Hiroyuki Fuchigami, Tokyo, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 31/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

A photoelectric converter in which an intermediate layer is provided between a first photoelectric-conversion-layer including a first p-type-semiconductor-layer and a first n-type-semiconductor-layer and a second photoelectric-conversion-layer including a second p-type-semiconductor-layer and a second n-type-semiconductor-layer. The intermediate layer includes an n-type-transparent conductive-oxide-film in contact with the first n-type-semiconductor-layer and a p-type-transparent-conductive oxide-film in contact with the second p-type-semiconductor-layer respectively having a bandgap equal to or higher than 1.5 electron volts. A width of a low carrier concentration region in a film thickness direction, in which a concentration of a free carrier formed near at least one of an interface on which the p-type-transparent-conductive-oxide-film comes into contact with the n-type-transparent-conductive-oxide-film and an interface on which the p-type-transparent-conductive-oxide-film comes into contact with the second p-type-semiconductor-layer is equal to or lower than 1×10cm, is equal to or less than 5 nanometers.


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