The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 01, 2013
Filed:
Feb. 15, 2008
Applicants:
Bernd Tillack, Frankfurt, DE;
Bernd Heinemann, Frankfurt, DE;
Yuji Yamamoto, Frankfurt, DE;
Inventors:
Assignee:
IHP GmbH—Innovations for High Performance, Frankfurt, DE;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/04 (2006.01); C23C 16/24 (2006.01); H01L 33/16 (2010.01);
U.S. Cl.
CPC ...
C23C 16/24 (2013.01);
Abstract
A method of depositing polycrystalline silicon exclusively on monocrystalline first silicon surface portions of a substrate surface which besides the first surface portions additionally has insulator surface portions, comprising the steps of depositing boron on the first silicon surface portions in an amount which in relation to the first silicon surface portions respectively corresponds to more than a monolayer of boron, and depositing silicon on the first silicon surface portions treated in that way.