The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 01, 2013
Filed:
Feb. 02, 2009
Applicants:
Hidenobu Fukutome, Kawasaki, JP;
Youichi Momiyama, Kawasaki, JP;
Inventors:
Hidenobu Fukutome, Kawasaki, JP;
Youichi Momiyama, Kawasaki, JP;
Assignee:
Fujitsu Semiconductor Limited, Yokohama, JP;
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/20 (2006.01); H01L 21/36 (2006.01);
U.S. Cl.
CPC ...
Abstract
A method of manufacturing a semiconductor device, in which an amorphous silicon layer is formed into a shape of a gate electrode of a MOS transistor, and then impurity is implanted to a surface of a silicon substrate from a diagonal direction using the amorphous silicon layer as a mask.