The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 01, 2013

Filed:

May. 06, 2011
Applicants:

Uk Kim, Gyeonggi-do, KR;

Kyung-bo Ko, Gyeonggi-do, KR;

Inventors:

Uk Kim, Gyeonggi-do, KR;

Kyung-Bo Ko, Gyeonggi-do, KR;

Assignee:

Hynix Semiconductor Inc., Gyeonggi-do, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/336 (2006.01);
U.S. Cl.
CPC ...
Abstract

A method for fabricating a semiconductor device includes etching a substrate to form a plurality of bodies isolated by a first trench, forming a buried bit line gap-filling a portion of the first trench, etching the top portions of the bodies to form a plurality of pillars isolated by a plurality of second trenches extending across the first trench, forming a passivation layer gap-filling a portion of the second trenches, forming an isolation layer that divides each of the second trenches into isolation trenches over the passivation layer, and filling a portion of the isolation trenches to form a buried word line extending in a direction crossing over the buried bit line.


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