The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 01, 2013
Filed:
Aug. 26, 2011
Hirofumi Iikawa, Yokkaichi, JP;
Masayuki Tanaka, Yokohama, JP;
Hirofumi Iikawa, Yokkaichi, JP;
Masayuki Tanaka, Yokohama, JP;
Kabushiki Kaisha Toshiba, Tokyo, JP;
Abstract
A nonvolatile semiconductor memory device includes a first insulating layer, charge storage layers, element isolation insulating films, and a second insulating layer formed on the charge storage layers and the element isolation insulating films and including a stacked structure of a first silicon nitride film, first silicon oxide film, intermediate insulating film and second silicon oxide film. The first silicon nitride film has a nitrogen concentration of not less than 21×10atoms/cm. Each element isolation insulating film includes a high-temperature oxide film formed along lower side surfaces of the charge storage layers between the charge storage layers and a coating type insulating film. The first silicon nitride film is formed on an upper surface of the high-temperature oxide film in upper surfaces of the element isolation insulating films and not on the upper surface of the coating type insulating film.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile