The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 01, 2013
Filed:
Nov. 02, 2010
Applicants:
Gabriel Kittler, Illmenau, DE;
Ralf Lerner, Erfurt, DE;
Inventors:
Gabriel Kittler, Illmenau, DE;
Ralf Lerner, Erfurt, DE;
Assignee:
X-FAB Semiconductor Foundries AG, Erfurt, DE;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/338 (2006.01);
U.S. Cl.
CPC ...
Abstract
The invention describes a method for fabricating silicon semiconductor wafers with the layer structures from III-V semiconductor layers for the integration of HEMTs based on semiconductor III-V layers with silicon components. SOI silicon semiconductor wafers are used, the active semiconductor layer of which has the III-V semiconductor layers () of the HEMT design () placed on it stretching over two mutually insulated regions () of the active silicon layer. An appropriate layer arrangement is likewise disclosed.