The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 01, 2013
Filed:
May. 27, 2011
Yun-mo Chung, Yongin, KR;
Ki-yong Lee, Yongin, KR;
Jin-wook Seo, Yongin, KR;
Min-jae Jeong, Yongin, KR;
Yong-duck Son, Yongin, KR;
Byung-soo SO, Yongin, KR;
Seung-kyu Park, Yongin, KR;
Byoung-keon Park, Yongin, KR;
Dong-hyun Lee, Yongin, KR;
Kil-won Lee, Yongin, KR;
Tak-young Lee, Yongin, KR;
Jong-ryuk Park, Yongin, KR;
Yun-Mo Chung, Yongin, KR;
Ki-Yong Lee, Yongin, KR;
Jin-Wook Seo, Yongin, KR;
Min-Jae Jeong, Yongin, KR;
Yong-Duck Son, Yongin, KR;
Byung-Soo So, Yongin, KR;
Seung-Kyu Park, Yongin, KR;
Byoung-Keon Park, Yongin, KR;
Dong-Hyun Lee, Yongin, KR;
Kil-Won Lee, Yongin, KR;
Tak-Young Lee, Yongin, KR;
Jong-Ryuk Park, Yongin, KR;
Samsung Display Co., Ltd., Yongin, Gyeonggi-Do, KR;
Abstract
A method of crystallizing a silicon layer and a method of manufacturing a thin film transistor using the same, the method of crystallizing the silicon layer including forming an amorphous silicon layer on a substrate; performing a hydrophobicity treatment on a surface of the amorphous silicon layer so as to obtain a hydrophobic surface thereon; forming a metallic catalyst on the amorphous silicon layer that has been subjected to the hydrophobicity treatment; and heat-treating the amorphous silicon layer including the metallic catalyst thereon to crystallize the amorphous silicon layer into a polycrystalline silicon layer.