The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 01, 2013
Filed:
May. 12, 2011
Applicants:
Noriyuki Kawashima, Kanagawa, JP;
Hidehisa Murase, Kanagawa, JP;
Mao Katsuhara, Kanagawa, JP;
Inventors:
Assignee:
Sony Corporation, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01);
U.S. Cl.
CPC ...
Abstract
A method of manufacturing a thin film transistor includes: forming a gate electrode on a substrate; forming a gate insulating layer on the gate electrode; forming an organic semiconductor layer on the gate insulating layer; forming an organic semiconductor pattern by selectively removing part of the organic semiconductor layer by means of a laser ablation method; and forming source and drain electrodes on the organic semiconductor pattern.
Kawashima, Noriyuki. (2013). Thin film transistor, method of manufacturing the same, and electronic device (U.S. Patent No. 8546197). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/8546197
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile