The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 01, 2013

Filed:

Apr. 22, 2010
Applicants:

Wen-chin Lee, Hsinchu, TW;

Wen-tsai Yen, Caotun Township, TW;

Ding-yuan Chen, Taichung, TW;

Liang-sheng Yu, Kaohsiung, TW;

Yu-han Chang, Hsin-Yuan Village, TW;

Inventors:

Wen-Chin Lee, Hsinchu, TW;

Wen-Tsai Yen, Caotun Township, TW;

Ding-Yuan Chen, Taichung, TW;

Liang-Sheng Yu, Kaohsiung, TW;

Yu-Han Chang, Hsin-Yuan Village, TW;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

Sulfur-containing chalcogenide absorbers in thin film solar cell are manufactured by sequential sputtering or co-sputtering targets, one of which contains a sulfur compound, onto a substrate and then annealing the substrate. The anneal is performed in a non-sulfur containing environment and avoids the use of hazardous hydrogen sulfide gas. A sulfurized chalcogenide is formed having a sulfur concentration gradient.


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