The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 01, 2013

Filed:

Sep. 22, 2011
Applicants:

Yusuke Yoshizumi, Itami, JP;

Yohei Enya, Itami, JP;

Takashi Kyono, Itami, JP;

Masahiro Adachi, Osaka, JP;

Katsushi Akita, Itami, JP;

Masaki Ueno, Itami, JP;

Takamichi Sumitomo, Itami, JP;

Shinji Tokuyama, Itami, JP;

Koji Katayama, Itami, JP;

Takao Nakamura, Itami, JP;

Takatoshi Ikegami, Itami, JP;

Inventors:

Yusuke Yoshizumi, Itami, JP;

Yohei Enya, Itami, JP;

Takashi Kyono, Itami, JP;

Masahiro Adachi, Osaka, JP;

Katsushi Akita, Itami, JP;

Masaki Ueno, Itami, JP;

Takamichi Sumitomo, Itami, JP;

Shinji Tokuyama, Itami, JP;

Koji Katayama, Itami, JP;

Takao Nakamura, Itami, JP;

Takatoshi Ikegami, Itami, JP;

Assignee:
Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

Provided is a group-III nitride semiconductor laser device with a laser cavity allowing for a low threshold current, on a semipolar surface of a support base in which the c-axis of a hexagonal group-III nitride is tilted toward the m-axis. First and second fractured facesto form the laser cavity intersect with an m-n plane. The group-III nitride semiconductor laser devicehas a laser waveguide extending in a direction of an intersecting line between the m-n plane and the semipolar surface. In a laser structure, a first surfaceis opposite to a second surface. The first and second fractured facesextend from an edgeof the first surface to an edgeof the second surface. The fractured faces are not formed by dry etching and are different from conventionally-employed cleaved facets such as c-planes, m-planes, or a-planes.


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