The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 8545807 B1

PDF
Full Text
Expired
Date of Patent:
Oct. 01, 2013

Filed:

Feb. 26, 2009
Applicants:

Yasuchika Hasegawa, Sapporo, JP;

Hideki Kawai, Hamamatsu, JP;

Tsuyoshi Kawai, Ikoma, JP;

Inventors:

Yasuchika Hasegawa, Sapporo, JP;

Hideki Kawai, Hamamatsu, JP;

Tsuyoshi Kawai, Ikoma, JP;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
A61K 51/00 (2006.01); A61M 36/14 (2006.01);
U.S. Cl.
CPC ...
Abstract

The present invention has been created to provide a near infrared high emission rare-earth complex having an excellent light-emitting property in the near infrared region. The near infrared high emission rare-earth complex of the present invention is characterized in that its structure is expressed by the following general formula (1): where Ln(III) represents a trivalent rare-earth ion; n is an integer equal to or greater than three; Xs represent either the same member or different members selected from a hydrogen atom, a deuterium atom, halogen atoms, C-Cgroups, hydroxyl groups, nitro groups, amino groups, sulfonyl groups, cyano groups, silyl groups, phosphonic groups, diazo groups and mercapto groups; and Z represents a bidentate ligand.


Find Patent Forward Citations

Hasegawa, Yasuchika. (2013). Near infrared high emission rare-earth complex (U.S. Patent No. 8545807). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/8545807

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