The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 24, 2013
Filed:
Oct. 22, 2008
Jean-marc Yannou, Colomby sur Thaon, FR;
Johannes Van Zwol, Beek-Ubbergen, NL;
Emmanuel Savin, Soulangy, FR;
Jean-Marc Yannou, Colomby sur Thaon, FR;
Johannes Van Zwol, Beek-Ubbergen, NL;
Emmanuel Savin, Soulangy, FR;
NXP B.V., Eindhoven, NL;
Abstract
The present invention relates to a semiconductor device, comprising a semiconductor substrate () with a thickness of less than 100 micrometer and with a first substrate side and an opposite second substrate side. A plurality of at least four monolithically integrated Zener or avalanche diodes () with a reverse breakdown voltage of less than 20 V are defined in the semiconductor substrate and connected with each other in a series connection. The diodes are defined in a plurality of mutually isolated substrate islands () in the semiconductor substrate, at least one diode per substrate island. The substrate islands are laterally surrounded by through-substrate isolations extending from the first to the second substrate side and comprising a filling () that electrically isolates a respective substrate island from a respective laterally surrounding area of the semiconductor substrate.