The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 24, 2013
Filed:
Mar. 05, 2012
Applicants:
Won-joo Kim, Hwaseong-si, KR;
Sang-moo Choi, Yongin-si, KR;
Tae-hee Lee, Yongin-si, KR;
Yoon-dong Park, Yongin-si, KR;
Inventors:
Won-joo Kim, Hwaseong-si, KR;
Sang-moo Choi, Yongin-si, KR;
Tae-hee Lee, Yongin-si, KR;
Yoon-dong Park, Yongin-si, KR;
Assignee:
Samsung Electronics Co., Ltd., Gyeonggi-do, KR;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 27/12 (2006.01);
U.S. Cl.
CPC ...
Abstract
Semiconductor devices and semiconductor device manufacturing methods. The semiconductor device manufacturing methods may form a memory cell having a silicon on insulator (SOI) structure only in one or more localized regions of a bulk semiconductor substrate by use selective etching. Accordingly, a different bias voltage may be applied to a peripheral device than to a memory cell having the SOI structure.