The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 24, 2013
Filed:
Jun. 16, 2010
Ji-young Kim, Los Angeles, CA (US);
Kang L. Wang, Santa Monica, CA (US);
Yong-jik Park, Suwon-si, KR;
Jeong-hee Han, Hwaseong-si, KR;
Augustin Jinwoo Hong, Los Angeles, CA (US);
Ji-Young Kim, Los Angeles, CA (US);
Kang L. Wang, Santa Monica, CA (US);
Yong-Jik Park, Suwon-si, KR;
Jeong-Hee Han, Hwaseong-si, KR;
Augustin Jinwoo Hong, Los Angeles, CA (US);
Samsung Electronics Co., Ltd., , KR;
The Regents of the University of California, Oakland, CA (US);
Abstract
An integrated circuit device includes a transistor array having a vertical stack of independently controllable gate electrodes therein. A first semiconductor channel region is provided, which extends on a first sidewall of the vertical stack of independently controllable gate electrodes. A first electrically insulating layer is also provided, which extends between the first semiconductor channel region and the first sidewall of the vertical stack of independently controllable gate electrodes. Source and drain regions are provided, which are electrically coupled to first and second ends of the first semiconductor channel region, respectively.