The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 24, 2013

Filed:

Jan. 25, 2008
Applicants:

Jae-young Park, Chungcheongbuk-do, KR;

Youn-sub Lim, Chungcheongbuk-do, KR;

Inventors:

Jae-Young Park, Chungcheongbuk-do, KR;

Youn-Sub Lim, Chungcheongbuk-do, KR;

Assignee:

Intellectual Ventures II LLC, Wilmington, DE (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 31/062 (2012.01);
U.S. Cl.
CPC ...
Abstract

An image sensor includes: a first impurity region of the first conductive type aligned with one side of the gate structure and extending to a first depth from a surface portion of the semiconductor layer; a first spacer formed on each sidewall of the gate structure; a second impurity region of the first conductive type, aligned with the first spacer and extending to a second depth that is larger than the first depth from the surface portion of the semiconductor layer; a second spacer formed on each sidewall of the first spacer; a third impurity region of the first conductive type aligned with the second spacer and extending to a third depth that is larger than the second depth from the surface portion of the semiconductor layer; and a fourth impurity region of a second conductive type beneath the third impurity region.


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