The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 24, 2013
Filed:
Nov. 17, 2009
Applicant:
Masayuki Tajiri, Osaka, JP;
Inventor:
Masayuki Tajiri, Osaka, JP;
Assignee:
Sharp Kabushiki Kaisha, Osaka, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/78 (2006.01); H01L 21/336 (2006.01);
U.S. Cl.
CPC ...
Abstract
A semiconductor device comprising at least two wiring layers on a substrate or a surface layer of the substrate, wherein a lower wiring layer of the two wiring layers contains silicon, and a silicon carbide layer is placed between the lower wiring layer and an upper wiring layer.
Tajiri, Masayuki. (2013). Semiconductor device and method for producing the same (U.S. Patent No. 8541822). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/8541822
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile