The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 24, 2013
Filed:
Nov. 08, 2010
Qhalid Fareed, Irmo, SC (US);
Vinod Adivarahan, Columbia, SC (US);
Asif Khan, Irmo, SC (US);
Nitek, Inc., Irmo, SC (US);
Abstract
An improved high breakdown voltage semiconductor device and method for manufacturing is provided. The device has a substrate and a AlGaN layer on the substrate wherein 0.1≦a≦1.00. A GaN layer is on the AlGaN layer. An InGaN/GaN channel layer is on the GaN layer wherein 0.1≦b≦1.00. A AlInGaN spacer layer is on the InGaN/GaN layer wherein 0.1≦c≦1.00 and 0.0≦d≦0.99. A AlInN nested superlattice barrier layer is on the AlInGaN spacer layer wherein 0.10≦e≦0.99. A AlInGaN leakage suppression layer is on the AlInN barrier layer wherein 0.1≦f≦0.99 and 0.1≦g≦0.99 wherein the leakage suppression layer decreases leakage current and increases breakdown voltage during high voltage operation. A superstructure, preferably with metallic electrodes, is on the AlInGaN leakage suppression layer.