The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 24, 2013
Filed:
Oct. 28, 2008
Shin Hashimoto, Itami, JP;
Tatsuya Tanabe, Itami, JP;
Shin Hashimoto, Itami, JP;
Tatsuya Tanabe, Itami, JP;
Sumitomo Electric Industries, Ltd., Osaka-shi, JP;
Abstract
In a group III nitride hetero junction transistor, a second AlInGaN layerforms a hetero junctionwith a first AlInGaN layer. A first electrodeforms a Schottky junction with the first AlInGaN layer. The first AlInGaN layerand the second AlInGaN layerare provided over a substrate. The electrodes, andinclude a source electrode, a gate electrode, and a drain electrode, respectively. The carbon concentration NC13 in the first AlInGaN layeris less than 1×10cm. The dislocation density D in the second AlInGaN layeris 1×10cm. The hetero junctiongenerates a two-dimensional electron gas layer. These provide a low-loss gallium nitride based electronic device.