The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 24, 2013
Filed:
Feb. 26, 2009
Philippe Meunier-beillard, Kortenberg, BE;
Mark C. J. C. M. Kramer, Sittard, NL;
Johannes J. T. M. Donkers, Valkenswaard, NL;
Guillaume Boccardi, Leuven, BE;
Philippe Meunier-Beillard, Kortenberg, BE;
Mark C. J. C. M. Kramer, Sittard, NL;
Johannes J. T. M. Donkers, Valkenswaard, NL;
Guillaume Boccardi, Leuven, BE;
NXP B.V., Eindhoven, NL;
Abstract
A semiconductor device () comprising a bipolar transistor and a field effect transistor within a semiconductor body () comprising a projecting mesa () within which are at least a portion of a collector region (and) and a base region () of the bipolar transistor. The bipolar transistor is provided with a first insulating cavity () provided in the collector region (and). The base region () is narrower in the plane of the substrate than the collector region (and) due to a second insulating cavity () provided around the base region () and between the collector region (and) and the emitter region (). By blocking diffusion from the base region the first insulating cavity () provides a reduction in the base collector capacitance and can be described as defining the base contact.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile