The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 8541268 B1

PDF
Full Text
Expired
Date of Patent:
Sep. 24, 2013

Filed:

Dec. 09, 2011
Applicants:

Chan-chang Liao, New Taipei, TW;

Hsien-kun Chiu, Taoyuan, TW;

Wei-pang Yen, Taoyuan County, TW;

Chao-huan Hsu, Taoyuan County, TW;

Inventors:

Chan-Chang Liao, New Taipei, TW;

Hsien-Kun Chiu, Taoyuan, TW;

Wei-Pang Yen, Taoyuan County, TW;

Chao-Huan Hsu, Taoyuan County, TW;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 21/84 (2006.01);
U.S. Cl.
CPC ...
Abstract

A thin film transistor and a method for manufacturing the same are provided. A top-gate thin film transistor is fabricated by a process using two gray-tone photomasks and a lift-off method. Therefore, the method can save cost of photomasks and processes comparing to a conventional fabrication method.


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Liao, Chan-Chang. (2013). Method for manufacturing thin film transistor (U.S. Patent No. 8541268). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/8541268

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