The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 24, 2013
Filed:
Apr. 21, 2011
Thin film transistor, method of manufacturing the same and flat panel display device having the same
Min-kyu Kim, Youngin, KR;
Jong-han Jeong, Youngin, KR;
Tae-kyung Ahn, Youngin, KR;
Jae-kyeong Jeong, Youngin, KR;
Yeon-gon MO, Youngin, KR;
Jin-seong Park, Youngin, KR;
Hyun-joong Chung, Youngin, KR;
Kwang-suk Kim, Youngin, KR;
Hui-won Yang, Youngin, KR;
Min-Kyu Kim, Youngin, KR;
Jong-Han Jeong, Youngin, KR;
Tae-Kyung Ahn, Youngin, KR;
Jae-Kyeong Jeong, Youngin, KR;
Yeon-Gon Mo, Youngin, KR;
Jin-Seong Park, Youngin, KR;
Hyun-Joong Chung, Youngin, KR;
Kwang-Suk Kim, Youngin, KR;
Hui-Won Yang, Youngin, KR;
Samsung Display Co., Ltd., Yongin, KR;
Abstract
A thin film transistor (TFT) using an oxide semiconductor as an active layer, a method of manufacturing the TFT, and a flat panel display device having the TFT include source and drain electrodes formed on a substrate; an active layer formed of an oxide semiconductor disposed on the source and drain electrodes; a gate electrode; and an interfacial stability layer formed on at least one of top and bottom surfaces of the active layer. In the TFT, the interfacial stability layer is formed of an oxide having a band gap of 3.0 to 8.0 eV. Since the interfacial stability layer has the same characteristics as a gate insulating layer and a passivation layer, chemically high interface stability is maintained. Since the interfacial stability layer has a band gap equal to or greater than that of the active layer, charge trapping is physically prevented.