The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 24, 2013
Filed:
Mar. 09, 2012
Yusuke Yoshizumi, Itami, JP;
Yohei Enya, Itami, JP;
Takashi Kyono, Itami, JP;
Masahiro Adachi, Osaka, JP;
Shinji Tokuyama, Osaka, JP;
Takamichi Sumitomo, Itami, JP;
Masaki Ueno, Itami, JP;
Takatoshi Ikegami, Itami, JP;
Koji Katayama, Osaka, JP;
Takao Nakamura, Itami, JP;
Yusuke Yoshizumi, Itami, JP;
Yohei Enya, Itami, JP;
Takashi Kyono, Itami, JP;
Masahiro Adachi, Osaka, JP;
Shinji Tokuyama, Osaka, JP;
Takamichi Sumitomo, Itami, JP;
Masaki Ueno, Itami, JP;
Takatoshi Ikegami, Itami, JP;
Koji Katayama, Osaka, JP;
Takao Nakamura, Itami, JP;
Sumitomo Electric Industries, Ltd., Osaka-shi, JP;
Abstract
A method of fabricating a III-nitride semiconductor laser device includes: preparing a substrate with a semipolar primary surface, the semipolar primary surface including a hexagonal III-nitride semiconductor; forming a substrate product having a laser structure, an anode electrode, and a cathode electrode, the laser structure including a substrate and a semiconductor region, and the semiconductor region being formed on the semipolar primary surface; after forming the substrate product, forming first and second end faces; and forming first and second dielectric multilayer films for an optical cavity of the nitride semiconductor laser device on the first and second end faces, respectively.