The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 8541247 B1

PDF
Full Text
Expired
Date of Patent:
Sep. 24, 2013

Filed:

Dec. 20, 2010
Applicants:

Haiwen Xi, San Jose, CA (US);

Antoine Khoueir, Apple Valley, MN (US);

Brian Lee, Boston, MA (US);

Patrick J. Ryan, St. Paul, MN (US);

Inventors:

Haiwen Xi, San Jose, CA (US);

Antoine Khoueir, Apple Valley, MN (US);

Brian Lee, Boston, MA (US);

Patrick J. Ryan, St. Paul, MN (US);

Assignee:

Seagate Technology LLC, Scotts Valley, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/115 (2006.01);
U.S. Cl.
CPC ...
Abstract

An apparatus and associated method for a non-volatile memory cell, such as an STRAM cell. In accordance with various embodiments, a magnetic free layer is laterally separated from an antiferromagnetic layer (AFM) by a non-magnetic spacer layer and medially separated from a synthetic antiferromagnetic layer (SAF) by a magnetic tunneling junction. The AFM pins the magnetization of the SAF through contact with a pinning region of the SAF that laterally extends beyond the magnetic tunneling junction.


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