The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 24, 2013

Filed:

Jul. 07, 2011
Applicants:

Marlon Menezes, Austin, TX (US);

Frank Y. Xu, Round Rock, TX (US);

Fen Wan, Austin, TX (US);

Inventors:

Marlon Menezes, Austin, TX (US);

Frank Y. Xu, Round Rock, TX (US);

Fen Wan, Austin, TX (US);

Assignee:

Molecular Imprints, Inc., Austin, TX (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
B05D 3/02 (2006.01); B05D 3/04 (2006.01); B32B 3/26 (2006.01);
U.S. Cl.
CPC ...
Abstract

Densifying a multi-layer substrate includes providing a substrate with a first dielectric layer on a surface of the substrate. The first dielectric layer includes a multiplicity of pores. Water is introduced into the pores of the first dielectric layer to form a water-containing dielectric layer. A second dielectric layer is provided on the surface of the water-containing first dielectric layer. The first and second dielectric layers are annealed at temperature of 600° C. or less. In an example, the multi-layer substrate is a nanoimprint lithography template. The second dielectric layer may have a density and therefore an etch rate similar to that of thermal oxide, yet may still be porous enough to allow more rapid diffusion of helium than a thermal oxide layer.


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