The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 24, 2013
Filed:
Aug. 15, 2008
Applicants:
Heon Su Jeon, Gunpo-si, KR;
Kyung Wook Hwang, Seoul, KR;
Inventors:
Heon Su Jeon, Gunpo-si, KR;
Kyung Wook Hwang, Seoul, KR;
Assignees:
Samsung Electronics Co., Ltd., Suwon-si, KR;
Seoul National University Industry Foundation, Seoul, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C25F 3/12 (2006.01);
U.S. Cl.
CPC ...
Abstract
Disclosed herein is a method of manufacturing a laterally graded porous silicon optical filter through diffusion-limited etching. The change in resonance frequency of the porous silicon layer in a taper axis direction is adjusted using the diffusion of reactive ions in an etchant under conditions of use of a related etch mask pattern. It is possible to manufacture an optical band-pass filter having a resonance frequency that linearly changes using a tapered etch window opening.