The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 17, 2013

Filed:

Feb. 17, 2012
Applicants:

Kuen-yu Tsai, Taipei, TW;

Chun-hung Liu, Taipei, TW;

Philip C. W. NG, Taipei, TW;

Pei-lin Tien, Taipei, TW;

Inventors:

Kuen-Yu Tsai, Taipei, TW;

Chun-Hung Liu, Taipei, TW;

Philip C. W. Ng, Taipei, TW;

Pei-Lin Tien, Taipei, TW;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G06F 17/50 (2006.01);
U.S. Cl.
CPC ...
Abstract

A method for compensating proximity effects of particle beam lithography processes is provided. The method includes the following steps. A control pattern is provided. A dissection process is provided. A set of control points are provided. The control pattern is defined as an input pattern of a lithography process. A target pattern is provided. A set of target points are produced. A set of target measurement values are provided. An actual pattern is defined. A set of actual measurement values are provided. A set of comparison values are calculated. An adjusting strategy is provided. A corrected pattern is produced. The corrected pattern is defined as an updated input of the lithography process.


Find Patent Forward Citations

Tsai, Kuen-Yu. (2013). Method for compensating proximity effects of particle beam lithography processes (U.S. Patent No. 8539392). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/8539392

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