The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 17, 2013
Filed:
Feb. 23, 2011
Jung Pill Kim, San Diego, CA (US);
Tae Hyun Kim, San Diego, CA (US);
Jung Pill Kim, San Diego, CA (US);
Tae Hyun Kim, San Diego, CA (US);
QUALCOMM Incorporated, San Diego, CA (US);
Abstract
A Magnetic Random Access Memory (MRAM) includes read sensing circuitry having an equalizer device configured between a bit cell output node and a reference node of the bit cell. The equalizer is turned on to couple the output node to the reference node during an initial portion of a read operation and to decouple the output node from the reference node after an equalization delay period. A sense amplifier is enabled to provide a data output from the bit cell only after the delay period and decoupling of the output node from the reference node to provide balanced sensing speed of data represented by parallel and antiparallel state magnetic tunnel junctions (MTJs).