The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 17, 2013
Filed:
Feb. 09, 2009
Takumi Mikawa, Shiga, JP;
Yoshio Kawashima, Osaka, JP;
Koji Arita, Osaka, JP;
Takeki Ninomiya, Osaka, JP;
Takumi Mikawa, Shiga, JP;
Yoshio Kawashima, Osaka, JP;
Koji Arita, Osaka, JP;
Takeki Ninomiya, Osaka, JP;
Panasonic Corporation, Osaka, JP;
Abstract
A nonvolatile semiconductor memory device () comprises a substrate () provided with a transistor (); a first interlayer insulating layer () formed over the substrate to cover the transistor; a first contact plug () formed in the first interlayer insulating layer and electrically connected to either of a drain electrode () or a source electrode () of the transistor, and a second contact plug () formed in the first interlayer insulating layer and electrically connected to the other of the drain electrode or the source electrode of the transistor; a resistance variable layer () formed to cover a portion of the first contact plug; a first wire () formed on the resistance variable layer; and a second wire () formed to cover a portion of the second contact plug; an end surface of the resistance variable layer being coplanar with an end surface of the first wire.