The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 17, 2013

Filed:

Jul. 02, 2010
Applicants:

Toshihiro Sekigawa, Tsukuba, JP;

Yohei Matsumoto, Tsukuba, JP;

Hanpei Koike, Tsukuba, JP;

Inventors:

Toshihiro Sekigawa, Tsukuba, JP;

Yohei Matsumoto, Tsukuba, JP;

Hanpei Koike, Tsukuba, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/41 (2006.01); G11C 11/412 (2006.01);
U.S. Cl.
CPC ...
Abstract

The present invention provides an SRAM cell which does not have the constraints on the size of transistors in order to realize stabilized write and read operations, which has a fewer number of control signal lines per port, and which can be easily multi-ported in the read operation as well as the write operation so that the write and read operations can be performed through a single bit line. The SRAM cell includes a feedback control transistor for controlling connection or disconnection of a positive feedback circuit between particularly two inverters, a write control transistor and a read control transistor connected to a single bit line, and a read buffer transistor connected to the read control transistor.


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