The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 17, 2013

Filed:

Mar. 15, 2012
Applicant:

Keiichi Kushida, Kawasaki, JP;

Inventor:

Keiichi Kushida, Kawasaki, JP;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G11C 14/00 (2006.01); G11C 13/00 (2006.01); G11C 16/02 (2006.01); G11C 11/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

According to one embodiment, there is provided a semiconductor memory device including a memory cell. The memory cell includes a first driving transistor, a first load transistor, a first read transfer transistor, a first write transfer transistor, a second driving transistor, a second load transistor, a second read transfer transistor, a second write transfer transistor, and one or more variable resistance elements. The one or more variable resistance elements has resistance that changes depending on a direction of a bias applied to both terminals. The one or more variable resistance elements are arranged in at least one of a portion between a first storage node and a first write transfer transistor and a portion between a second storage node and a second write transfer transistor.


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