The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 17, 2013
Filed:
Sep. 12, 2011
Kenji Anjo, Oamishirasato, JP;
Tomohiko Ootani, Mobara, JP;
Kenji Anjo, Oamishirasato, JP;
Tomohiko Ootani, Mobara, JP;
Hitachi Displays, Ltd., Chiba, JP;
Panasonic Liquid Crystal Display Co., Ltd., Hyogo, JP;
Abstract
In a liquid crystal display device of IPS mode with a smaller number of layers, a gate electrode is formed on a TFT substrate. A gate insulating film is formed to cover the gate electrode, on which a semiconductor layer is formed. A drain electrode and a source electrode are placed on the semiconductor layer. A planar pixel electrode is formed from ITO on the gate insulating film prior to the formation of the drain electrode, source electrode, image signal line, and the like. This process is performed to prevent the image signal line, the drain electrode, the source electrode, and the like, from being consumed by the cell reaction through a developer during the patterning of the ITO when a pin hole is present in the ITO, in order not to cause disconnection. As a result, it is possible to improve the production yield and achieve high reliability.