The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 17, 2013

Filed:

Oct. 12, 2011
Applicants:

Tatsuya Kabe, Toyama, JP;

Susumu Matsumoto, Toyama, JP;

Inventors:

Tatsuya Kabe, Toyama, JP;

Susumu Matsumoto, Toyama, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/532 (2006.01);
U.S. Cl.
CPC ...
Abstract

An interlayer insulating film containing oxygen and carbon is formed on a semiconductor substrate. A groove is formed in the interlayer insulating film. An auxiliary film containing predetermined first and second metallic elements is formed on a bottom surface and a sidewall of the formed groove. Then, an interconnect body layer containing copper is formed to fill the groove. By performing a thermal treatment, a first barrier film containing a compound of the first metallic element and an oxygen element of the interlayer insulating film, and a second barrier film containing a compound of the second metallic element and carbon element of the interlayer insulating film are formed on the interlayer insulating film on the bottom surface and the sidewall of the groove.


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