The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 17, 2013

Filed:

Aug. 05, 2010
Applicant:

Daisuke Inomata, Tokyo, JP;

Inventor:

Daisuke Inomata, Tokyo, JP;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 27/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

A semiconductor device having a structure that can reduce stress due to difference in coefficients of thermal expansion and prevent or suppress generation of cracks, and a semiconductor device manufacturing method, are provided. The semiconductor device includes a single crystal silicon substrate having a main face on which semiconductor elements are formed and a side face intersecting with the main face, and a sealing resin provided covering at least a portion of the side face. The side face covered by the sealing resin is equipped with a first face with a plane direction forming an angle of −5° to +5° to the plane direction of the main face.


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