The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 17, 2013
Filed:
Aug. 22, 2007
Applicants:
Jue Peng, Hong Kong, CN;
Chen Chao, Hong Kong, CN;
Ji-yan Dai, Hong Kong, CN;
Helen L. W. Chan, Hong Kong, CN;
Inventors:
Jue Peng, Hong Kong, CN;
Chen Chao, Hong Kong, CN;
Ji-yan Dai, Hong Kong, CN;
Helen L. W. Chan, Hong Kong, CN;
Assignee:
The Hong Kong Polytechnic University, Hung Hoon, Kowloon, HK;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/84 (2006.01);
U.S. Cl.
CPC ...
Abstract
The present invention relates a method of fabricating a piezoelectric device through micromachining piezoelectric-on-silicon wafer. The wafers are constructed so that piezoelectric layer is a single wafer having a thin layer from 5 to 50 μm.
Peng, Jue. (2013). Fabrication of piezoelectric single crystalline thin layer on silicon wafer (U.S. Patent No. 8536665). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/8536665
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile