The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 17, 2013
Filed:
Mar. 05, 2013
Fujitsu Semiconductor Limited, Yokohama, JP;
Yoshihiro Takemae, Yokohama, JP;
Tsutomu Hosoda, Yokohama, JP;
Fujitsu Semiconductor Limited, Yokohama, JP;
Abstract
A semiconductor device includes a first transistor including a GaN-based semiconductor stacked structure formed over a substrate, a first gate electrode having a plurality of first fingers over the semiconductor stacked structure, a plurality of first drain electrodes provided along the first fingers, and a plurality of first source electrodes provided along the first fingers; a second transistor including the semiconductor stacked structure, a second gate electrode having a plurality of second fingers over the semiconductor stacked structure, the second drain electrodes provided along the second fingers, and a plurality of second source electrodes provided along the second fingers; a drain pad provided over or under the first drain electrodes, and coupled to the first drain electrodes; a source pad provided over or under the second source electrodes, and coupled to the second source electrodes; and a common pad coupled to the first source electrodes and the second drain electrodes.