The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 17, 2013
Filed:
Dec. 29, 2011
Chih-hao Hsu, Hsinchu, TW;
Rong Xuan, New Taipei, TW;
Yu-hsiang Chang, Hsinchu County, TW;
Jung-chun Huang, Tainan, TW;
Chun-ying Chen, Taichung, TW;
Chih-Hao Hsu, Hsinchu, TW;
Rong Xuan, New Taipei, TW;
Yu-Hsiang Chang, Hsinchu County, TW;
Jung-Chun Huang, Tainan, TW;
Chun-Ying Chen, Taichung, TW;
Industrial Technology Research Institute, Hsinchu, TW;
National Cheng-Kung University, Tainan, TW;
Abstract
A nitride semiconductor light emitting device including an n-type nitride semiconductor layer, a p-type nitride semiconductor layer, a light emitting semiconductor layer, a first metal pad, a second metal pad, and a first magnetic material layer is provided. The light emitting semiconductor layer is disposed between the n-type nitride semiconductor layer and the p-type nitride semiconductor layer. The first metal pad is electrically connected to the n-type nitride semiconductor layer. The second metal pad is electrically connected to the p-type nitride semiconductor layer. The first magnetic material layer is disposed between the first metal pad and the n-type nitride semiconductor layer. A distribution area of the first magnetic material layer parallel to a (0001) plane of the n-type nitride semiconductor layer is greater than or equal to an area of the first metal pad parallel to the (0001) plane.