The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 17, 2013
Filed:
Oct. 09, 2009
Akihiko Murai, Kagoshima, JP;
Akihiko Murai, Kagoshima, JP;
Panasonic Corporation, Osaka, JP;
Abstract
A semi-conductor light emitting devicein the present invention comprises an n-type ZnO substrate, an emission layer, anode, and cathode. The n-type ZnO substratehas a mounting surfaceon one of its surfaces. The emission layeris composed of a p-type GaN filmand an n-type GaN film, and superimposed on the n-type ZnO substratewith the p-type GaN filmdirectly disposed on the mounting surfaceof the n-type ZnO substrate. The anodeis disposed directly on the mounting surfaceof the n-type GaN substratein an ohmic contact therewith and in a spaced relation from the emission layer. The cathodeis disposed on the n-type GaN filmin an ohmic contact therewith. The cathodeand anodeare of the same structure solely composed of a metallic material. The semi-conductor light emitting device in the present invention assures good ohmic contact of both the cathodeand the anode, and minimizes consumption of metallic materials.