The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 8536579 B1

Expired

Date of Patent:

Sep. 17, 2013

Filed:

Jul. 16, 2008

Electronic device having spatially inverted thin film transistors

Applicants:

Christoph Wilhelm Sele, London, GB;

Monica Johanna Beenhakkers, Helmond, NL;

Gerwin Hermanus Gelinck, Valkenswaard, NL;

Nicolaas Aldegonda Jan Maria Van Aerle, Eindhoven, NL;

Hjalmar Edzer Ayco Huitema, Veldhoven, NL;

Inventors:

Christoph Wilhelm Sele, London, GB;

Monica Johanna Beenhakkers, Helmond, NL;

Gerwin Hermanus Gelinck, Valkenswaard, NL;

Nicolaas Aldegonda Jan Maria Van Aerle, Eindhoven, NL;

Hjalmar Edzer Ayco Huitema, Veldhoven, NL;

Assignee:

Creator Technology B.V., Breda, NL;

Attorney:

Primary Examiner:

Ida M Soward

Int. Cl.

CPC ...

H01L 29/10 (2006.01); H01L 29/76 (2006.01); H01L 31/036 (2006.01); H01L 31/112 (2006.01); H01L 29/04 (2006.01); H01L 31/0376 (2006.01); H01L 31/20 (2006.01); H01L 29/15 (2006.01); H01L 31/062 (2012.01); H01L 31/113 (2006.01); H01L 27/01 (2006.01); H01L 27/12 (2006.01); H01L 31/0392 (2006.01);

U.S. Cl.

CPC ...

Abstract

The invention relates to an electronic device including a sequence of a first thin film transistor (TFT) and a second TFT, the first TFT including a first set of electrodes separated by a first insulator, the second TFT comprising a second set of electrodes separated by a second insulator, wherein the first set of electrodes and the second set of electrodes are formed from a first shared conductive layer and a second shared conductive layer, the first insulator and the second insulator being formed by a shared dielectric layer. The invention further relates to a method of manufacturing an electronic device.

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Sele, Christoph. (2013). Electronic device having spatially inverted thin film transistors (U.S. Patent No. 8536579). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/8536579

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