The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 17, 2013
Filed:
Mar. 18, 2011
Thomas Wunderer, Waltenhofen, DE;
Stephan Schwaiger, Ulm, DE;
Ilona Argut, Ulm, DE;
Rudolph Rosch, Ichenhausen, DE;
Frank Lipski, Neu-Ulm, DE;
Ferdinand Scholz, Ulm, DE;
Thomas Wunderer, Waltenhofen, DE;
Stephan Schwaiger, Ulm, DE;
Ilona Argut, Ulm, DE;
Rudolph Rosch, Ichenhausen, DE;
Frank Lipski, Neu-Ulm, DE;
Ferdinand Scholz, Ulm, DE;
Freiberger Compund Materials GmbH, Freiberg, DE;
Abstract
A method of manufacturing a semipolar semiconductor crystal comprising a group-III-nitride (III-N), the method comprising: providing a substrate comprising sapphire (AlO) having a first surface that intersects c-planes of the sapphire; forming a plurality of trenches in the first surface, each trench having a wall whose surface is substantially parallel to a c-plane of the substrate; epitaxially growing a group-III-nitride (III-N) material in the trenches on the c-plane surfaces of their walls until the material overgrows the trenches to form a second planar surface, substantially parallel to a (20-2l) crystallographic plane of the group-III-nitride, wherein l is an integer.